Infineon IPD80R3K3P7ATMA1: 80V N-Channel Power MOSFET for High-Efficiency Automotive and Industrial Applications

The demand for robust, high-efficiency power management solutions is at an all-time high, particularly in the automotive and industrial sectors where reliability and performance are non-negotiable. Addressing this need, Infineon Technologies introduces the IPD80R3K3P7ATMA1, an 80V N-Channel Power MOSFET engineered to deliver superior efficiency and power density in demanding applications.

This MOSFET is built on Infineon’s advanced OptiMOS™ P7 technology, which is specifically designed to offer an optimal balance between low on-state resistance (RDS(on)) and high switching performance. With a maximum RDS(on) of just 3.3 mΩ at 10 V, the device minimizes conduction losses, making it exceptionally efficient for high-current applications. The low gate charge (Qg) and figure of merit (FOM) further enhance its switching efficiency, reducing both switching losses and electromagnetic interference (EMI)—a critical consideration in noise-sensitive environments.

In automotive systems, the IPD80R3K3P7ATMA1 is ideal for use in electric power steering (EPS), brake systems, and DC-DC converters within hybrid and electric vehicles (HEVs/EVs). Its high voltage rating of 80V provides ample headroom for 48V mild-hybrid systems, ensuring reliable operation under voltage transients. The device also meets the stringent AEC-Q101 qualification standard, guaranteeing its robustness and longevity in the harsh operating conditions typical of automotive environments, including wide temperature ranges and high vibrational stress.

For industrial applications, this MOSFET excels in power supplies, motor drives, and solar inverters. Its high efficiency helps reduce energy consumption and heat generation, leading to smaller heatsinks and more compact system designs. The strong avalanche ruggedness and high body diode robustness ensure dependable performance in inductive switching scenarios, enhancing system reliability.

The package—a D2PAK-7 (TO-263-7)—offers an excellent thermal performance and power dissipation capability, which is crucial for maintaining device stability under high load conditions. Additionally, the package is designed for easy PCB mounting, supporting automated assembly processes and helping to reduce manufacturing costs.

ICGOOODFIND: The Infineon IPD80R3K3P7ATMA1 stands out as a high-performance Power MOSFET that combines low losses, high reliability, and automotive-grade quality. It is a compelling choice for designers seeking to improve efficiency and power density in next-generation automotive and industrial power systems.

Keywords:

OptiMOS™ P7 Technology

AEC-Q101 Qualified

Low RDS(on)

Automotive Applications

High-Efficiency Switching