Infineon BSS215PH6327XTSA1 P-Channel Power MOSFET: Datasheet, Pinout, and Application Circuits

The Infineon BSS215PH6327XTSA1 is a robust P-Channel enhancement mode Power MOSFET housed in a compact SOT-23 package. Engineered using Infineon's advanced proprietary planar stripe technology, this MOSFET is designed for high-efficiency power management and switching applications. Its P-Channel configuration offers a significant advantage in circuit design by allowing for simplified driving in high-side switch configurations, as it can be controlled directly by microcontroller outputs without the need for additional charge pumps or level shifters typically required for N-Channel high-side switches.

A primary strength of the BSS215PH6327XTSA1 lies in its exceptionally low gate charge (Qg) and low on-resistance (RDS(on)). With a maximum RDS(on) of just 120 mΩ at a gate-source voltage of -10 V, it minimizes conduction losses, leading to cooler operation and higher overall system efficiency. This makes it an ideal choice for applications where power loss and thermal management are critical concerns.

Datasheet Overview

The datasheet for the BSS215PH6327XTSA1 provides all essential electrical characteristics and maximum ratings. Key parameters include:

Drain-Source Voltage (VDS): -20 V

Continuous Drain Current (ID): -2.3 A

RDS(on) (max): 120 mΩ @ VGS = -10 V, 160 mΩ @ VGS = -4.5 V

Gate Threshold Voltage (VGS(th)): -0.9 V to -2.0 V

Total Gate Charge (Qg): 7.8 nC (typical)

These specifications highlight its suitability for low-voltage applications commonly found in consumer electronics, battery-powered devices, and DC-DC converters.

Pinout (SOT-23 Package)

The device comes in a standard SOT-23 (TO-236) 3-pin package:

1. Pin 1 (Gate): The control pin. Applying a voltage relative to the source pin turns the device on.

2. Pin 2 (Source): The input terminal, typically connected to the power rail.

3. Pin 3 (Drain): The output terminal, connected to the load.

Application Circuits

1. Load Switch: The most common application is a high-side load switch. A microcontroller GPIO pin can directly pull the Gate pin to ground (0 V) to turn the MOSFET on when the source is connected to a battery voltage (e.g., 3.3V or 5V). A pull-up resistor ensures the MOSFET remains off when the microcontroller pin is in a high-impedance state.

2. Reverse Polarity Protection: A P-Channel MOSFET can be used for simple and efficient reverse polarity protection. The MOSFET is placed in the positive supply line. Under correct polarity, the body diode is forward-biased, allowing current to flow and the gate-source voltage to become negative, turning the MOSFET fully on. If polarity is reversed, the body diode is reverse-biased, and no gate-source voltage is present, keeping the circuit protected.

3. DC-DC Conversion (Power Switching): It can serve as the high-side switch in non-isolated switching regulator topologies (e.g., buck converters), where its fast switching speed and low Qg contribute to high conversion efficiency.

ICGOODFIND: The Infineon BSS215PH6327XTSA1 stands out as an excellent choice for designers seeking a compact, efficient, and easy-to-drive P-Channel MOSFET. Its compelling combination of low on-resistance, low gate drive requirements, and a small form factor makes it exceptionally well-suited for space-constrained, battery-operated portable devices, power management units, and various load switching applications.

Keywords: P-Channel MOSFET, Load Switch, Low On-Resistance, Power Management, High-Side Switching