Infineon IFX1040SJ: High-Performance 40V Single N-Channel HEXFET Power MOSFET
In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IFX1040SJ stands out as a premier solution, engineered to meet the rigorous demands of modern switching applications. This 40V Single N-Channel HEXFET Power MOSFET leverages Infineon's advanced semiconductor technology to deliver exceptional performance in a compact D2PAK (TO-263) surface-mount package.
A key highlight of the IFX1040SJ is its extremely low on-state resistance (RDS(on)) of just 1.0 mΩ typical. This minimal resistance is critical for reducing conduction losses, which directly translates to higher efficiency and lower heat generation in applications such as DC-DC converters, motor control, and power management systems. The low RDS(on) ensures that more power is delivered to the load rather than being dissipated as waste heat, enhancing overall system reliability.

The device is optimized for high-current handling capabilities, supporting continuous drain current (ID) up to 240 A at 25°C. This makes it exceptionally suitable for demanding environments including automotive systems, industrial drives, and robust power supplies. The HEXFET technology employed provides a high cell density and low gate charge, facilitating fast switching speeds and improved efficiency in high-frequency circuits.
Thermal management is a critical factor in power devices, and the IFX1040SJ excels with its superior thermal performance. The D2PAK package offers an efficient path for heat dissipation, allowing the MOSFET to operate effectively under high power conditions. Additionally, the device features a low thermal resistance and is designed to withstand high pulse current, ensuring durability and stable operation even in stressful scenarios.
Furthermore, the IFX1040SJ is characterized by its enhanced avalanche ruggedness and 100% automated assembly and testing, guaranteeing high quality and consistency. These attributes make it a trusted choice for designers who prioritize both performance and longevity in their power electronic designs.
ICGOO FIND: The Infineon IFX1040SJ is a top-tier Power MOSFET that combines ultra-low RDS(on), high current capability, and excellent thermal performance, making it an ideal component for high-efficiency power conversion and switching applications.
Keywords: Power MOSFET, Low RDS(on), HEXFET Technology, High Current Capability, Thermal Performance.
