Infineon IPB60R099CPATMA1 CoolMOS™ Power Transistor: Datasheet, Specifications, and Application Notes
The Infineon IPB60R099CPATMA1 is a state-of-the-art superjunction MOSFET (CoolMOS™) belonging to the CPAU family, engineered to deliver exceptional efficiency and performance in high-power switching applications. This N-channel power transistor is renowned for its ultra-low on-state resistance (RDS(on)) and high switching speed, making it an ideal choice for modern power supply designs that demand high power density and reliability.
A key highlight of the IPB60R099CPATMA1 is its remarkably low RDS(on) of just 99 mΩ at a gate-source voltage of 10 V. This low resistance significantly reduces conduction losses, leading to higher efficiency and lower heat generation. The device is rated for a drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 11.5 A at 25°C, with the capability to handle peak currents up to 45 A. These specifications make it suitable for high-power applications such as server and telecom power supplies, industrial SMPS (Switch-Mode Power Supplies), and power factor correction (PFC) stages.
Housed in a TO-263-3 (D2PAK) surface-mount package, the transistor offers excellent thermal performance, which is crucial for dissipating heat in compact designs. The package is designed for automotive-grade reliability, adhering to stringent AEC-Q101 standards, ensuring robustness in harsh environments.
The integrated fast body diode enhances the device’s performance in hard-switching topologies by improving reverse recovery characteristics. This feature, combined with the low gate charge (QG) and low output capacitance (COSS), minimizes switching losses and enables higher frequency operation, contributing to smaller magnetic components and reduced system size.
Application Notes:
For optimal performance, it is recommended to:
- Utilize a gate driver with sufficient drive capability to minimize switching times.
- Ensure proper PCB layout to reduce parasitic inductance and avoid voltage spikes.
- Implement effective thermal management using adequate heatsinking to maintain junction temperature within limits.
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ICGOOODFIND: The Infineon IPB60R099CPATMA1 stands out as a high-efficiency, high-reliability power MOSFET, ideal for advanced switching power supplies and automotive systems. Its combination of ultra-low RDS(on), fast switching, and robust packaging makes it a top choice for designers aiming for superior power density and performance.
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Keywords:
CoolMOS™, Superjunction MOSFET, Low RDS(on), Power Supply, AEC-Q101
