Infineon IPP086N10N3G: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPP086N10N3G stands out as a benchmark in power semiconductor technology. As part of the esteemed OptiMOS™ 5 family, this 100 V N-channel power MOSFET is engineered to set new standards in performance for a wide array of power conversion applications, from server and telecom SMPS to motor drives and solar inverters.

At the core of its superior performance is Infineon's advanced trench technology. This innovation is pivotal in achieving an exceptionally low figure-of-merit (R DS(on) Q G), which is the key indicator for a MOSFET's switching efficiency. The device boasts an ultra-low on-state resistance (R DS(on)) of just 8.6 mΩ maximum at 10 V, significantly reducing conduction losses. Concurrently, its low gate charge (Q G) and optimized internal capacitances ensure swift switching transitions, minimizing switching losses. This dual achievement allows systems to operate at higher frequencies with reduced energy dissipation, leading to cooler operation and the potential for smaller form factors by reducing the need for extensive heat sinking.

The IPP086N10N3G is packaged in the innovative D 2PAK 7-pin package, which offers substantial advantages over traditional packages. The additional pins provide separate paths for the power and gate connections, drastically reducing parasitic inductance. This results in more stable switching behavior, suppressed voltage overshoots, and enhanced overall system reliability. Furthermore, the package is designed for excellent thermal performance, efficiently transferring heat from the silicon die to the PCB.

Designers will also appreciate the device's robustness and reliability, featuring a high avalanche ruggedness and an extended SOA (Safe Operating Area). These characteristics make it exceptionally suited for handling stressful conditions and overload scenarios commonly encountered in industrial environments.

ICGOOODFIND: The Infineon IPP086N10N3G is a top-tier power MOSFET that masterfully balances ultra-low conduction losses with fast switching capabilities. Its advanced OptiMOS™ 5 technology and superior D2PAK-7 package make it an ideal solution for engineers designing high-efficiency, high-power-density, and reliable next-generation power conversion systems.

Keywords: OptiMOS™ 5, Low R DS(on), High Efficiency, Power Density, D 2PAK-7 Package.