Infineon IPD530N15N3G: High-Performance 15V OptiMOS 5 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD530N15N3G stands out as a premier solution, embodying the advanced technology of the OptiMOS™ 5 15 V power transistor family. Designed to meet the rigorous demands of modern applications, this component is engineered for superior switching performance and exceptional power density.

A key highlight of the IPD530N15N3G is its remarkably low on-state resistance (RDS(on)) of just 0.53 mΩ (max). This minimal resistance directly translates to reduced conduction losses, enabling higher efficiency and lower power dissipation. Such efficiency is critical in applications like synchronous rectification in switched-mode power supplies (SMPS), motor control, and high-frequency DC-DC converters, where every watt saved enhances overall system performance and thermal management.

The device is housed in an advanced D²PAK (TO-263) package, optimized for efficient thermal dissipation. This allows designers to push the limits of power density without compromising reliability, even in space-constrained environments. Furthermore, the OptiMOS™ 5 technology ensures robust avalanche ruggedness and a high body diode capability, providing enhanced system durability under stressful operating conditions, such as inductive load switching.

Another significant advantage is its optimized gate charge (Qg). The low Qg minimizes switching losses, which is particularly beneficial for high-frequency operation. This characteristic allows for faster switching speeds, reducing the size of passive components like inductors and capacitors, thereby lowering system cost and footprint.

ICGOOODFIND: The Infineon IPD530N15N3G is a top-tier power MOSFET that sets a high standard for performance and efficiency. Its ultra-low RDS(on), excellent thermal characteristics, and superior switching dynamics make it an ideal choice for designers aiming to maximize efficiency and power density in next-generation power systems.

Keywords:

Power Efficiency

Low RDS(on)

Synchronous Rectification

Thermal Performance

OptiMOS™ 5 Technology